*For representation only.
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Technical Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Package / Case | PowerPAK® SC-70-6 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
11,232
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 30 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
The SIA421DJ-T1-GE3 from Vishay Semiconductors falls under the mosfets category. It features a FET type of P-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 30 V, a current, continuous drain (id) @ 25°C of 12A (Tc), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 35mOhm @ 5.3A, 10V. This part has a typical lead time of 30 Days from factory. Order SIA421DJ-T1-GE3 from Simplytronix for authenticated stock and same-day order processing.
