*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 8 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 780mW (Ta), 1.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-Micro Foot (1x1) |
| Package / Case | 4-UFBGA |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
13,415
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541210000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Vishay Semiconductors, the SI8410DB-T2-E1 is classified as a mosfets. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 20 V, a current, continuous drain (id) @ 25°C of 3.8A (Ta), a drive voltage of 1.5V, 4.5V and a rds on (max) @ id, vgs of 37mOhm @ 1.5A, 4.5V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SI8410DB-T2-E1 for same-day shipping with genuine parts guaranteed.
