*For representation only.
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Technical Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 12.3mOhm @ 13.9A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
14,408
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 36 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
SI7617DN-T1-GE3 is a mosfets manufactured by Vishay Semiconductors. This component is defined by a FET type of P-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 30 V, a current, continuous drain (id) @ 25°C of 35A (Tc), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 12.3mOhm @ 13.9A, 10V. This part has a typical lead time of 36 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries SI7617DN-T1-GE3 in stock, backed by a genuine parts guarantee and quick dispatch.
