*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V, 51nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 10V, 1200pF @ 10V |
| Power - Max | 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package | 8-TSSOP |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 3000 |
8,660
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
The SI6562CDQ-T1-BE3 from Vishay Semiconductors falls under the mosfets category. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of N and P-Channel, a FET feature of -, a drain to source voltage of 20V, a current, continuous drain (id) @ 25°C of 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc) and a rds on (max) @ id, vgs of 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V. This part has a typical lead time of 0 Days from factory. Simplytronix carries SI6562CDQ-T1-BE3 in stock, backed by a genuine parts guarantee and quick dispatch.
