Similar Products
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta), 3.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 2.8A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 405 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 860mW (Ta), 1.6W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 221 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
SI2301HDS-T1-GE3 is a mosfets manufactured by Vishay Semiconductors. Notable characteristics of this part include a FET type of P-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 20 V, a current, continuous drain (id) @ 25°C of 2.3A (Ta), 3.1A (Tc), a drive voltage of 2.5V, 4.5V and a rds on (max) @ id, vgs of 112mOhm @ 2.8A, 4.5V. This part has a typical lead time of 221 Days from factory and ships with a full manufacturer datasheet available for download. Order SI2301HDS-T1-GE3 from Simplytronix for authenticated stock and same-day order processing.
