| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 561 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 2.78W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-70-6 |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Alternate Packaging | SI1467DH-T1-BE3 |
| Suggested Replacement | SI1467DH-T1-BE3 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541210000 |
| USHTS | 8541290065 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541290000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
SI1467DH-T1-E3 is a mosfets manufactured by Vishay Semiconductors. This component is defined by a FET type of P-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 20 V, a current, continuous drain (id) @ 25°C of 2.7A (Tc), a drive voltage of 1.8V, 4.5V and a rds on (max) @ id, vgs of 90mOhm @ 2A, 4.5V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries SI1467DH-T1-E3 in stock, backed by a genuine parts guarantee and quick dispatch.