| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
500 V |
| Current - Continuous Drain (Id) @ 25°C |
3.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
3Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
17 nC @ 10 V |
| Vgs (Max) |
±30V |
| Input Capacitance (Ciss) (Max) @ Vds |
340 pF @ 25 V |
| Power Dissipation (Max) |
83W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-251AA |
| Package / Case |
TO-251-3 Short Leads, IPAK, TO-251AA |