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IRFRC20TRLPBF Vishay Semiconductors
*For representation only.

IRFRC20TRLPBF

MOSFETs N-Chan 600V 2.0 Amp
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.4Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging IRFRC20PBF
Suggested Replacement IRFRC20TRLPBF-BE3
13,141
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
MXHTS 8541299900
ECCN EAR99
Product Overview

The IRFRC20TRLPBF from Vishay Semiconductors falls under the mosfets category. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 600 V, a current, continuous drain (id) @ 25°C of 2A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 4.4Ohm @ 1.2A, 10V. This part has a typical lead time of 0 Days from factory. You can source IRFRC20TRLPBF through Simplytronix, with fast shipping and verified authenticity.

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