*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
📦
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 1000 |
🔁
Alternate / Replacement Parts
| Alternate Packaging | IRFB9N60APBF |
| Suggested Replacement |
7,141
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
Manufactured by Vishay / Siliconix, the IRFB9N60APBF-BE3 is classified as a mosfets. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 600 V, a current, continuous drain (id) @ 25°C of 9.2A (Tc), a rds on (max) @ id, vgs of 750mOhm @ 5.5A, 10V and a vgs(th) (max) @ id of 4V @ 250µA. This part has a typical lead time of 0 Days from factory. Order IRFB9N60APBF-BE3 from Simplytronix for authenticated stock and same-day order processing.
