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IRF9640PBF Vishay Semiconductors
*For representation only.

IRF9640PBF

MOSFETs TO220 200V 11A P-CH MOSFET
Technical Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging IRF9640PBF-BE3
Suggested Replacement IRF9640PBF-BE3
8,669
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 552 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
MXHTS 8541299900
ECCN EAR99
Product Overview

The IRF9640PBF from Vishay Semiconductors falls under the mosfets category. It features a FET type of P-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 200 V, a current, continuous drain (id) @ 25°C of 11A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 500mOhm @ 6.6A, 10V. This part has a typical lead time of 552 Days from factory. Order IRF9640PBF from Simplytronix for authenticated stock and same-day order processing.

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