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IRF9530SPBF Vishay Semiconductors
*For representation only.

IRF9530SPBF

MOSFETs TO263 100V 12A P-CH MOSFET
Technical Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 88W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging IRF9530STRLPBF
Suggested Replacement
13,702
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 245 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
MXHTS 85412999
ECCN EAR99
Product Overview

The IRF9530SPBF from Vishay Semiconductors falls under the mosfets category. It features a FET type of P-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 12A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 300mOhm @ 7.2A, 10V. This part has a typical lead time of 245 Days from factory. Simplytronix carries IRF9530SPBF in stock, backed by a genuine parts guarantee and quick dispatch.

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