*For representation only.
Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 3.1A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
| Power Dissipation (Max) | 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 1000 |
Alternate / Replacement Parts
| Alternate Packaging | IRF620PBF |
| Suggested Replacement |
12,602
In Stock
Packaging: Tube
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Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Reported Lead Time | 0 Days (from factory) |
Documentation
Not Available
Compliance & Export Information
| Country | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
Product Overview
IRF620PBF-BE3 by Vishay / Siliconix is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
