*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 3.1A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
| Power Dissipation (Max) | 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 1000 |
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Alternate / Replacement Parts
| Alternate Packaging | IRF620PBF |
| Suggested Replacement |
12,602
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
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Product Overview
The IRF620PBF-BE3 from Vishay / Siliconix falls under the mosfets category. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 200 V, a current, continuous drain (id) @ 25°C of 5.2A (Tc), a rds on (max) @ id, vgs of 800mOhm @ 3.1A, 10V and a vgs(th) (max) @ id of 4V @ 250µA. This part has a typical lead time of 0 Days from factory. Simplytronix carries IRF620PBF-BE3 in stock, backed by a genuine parts guarantee and quick dispatch.
