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RGP10ME-E3/73

Small Signal Switching Diodes 1.0A 1000 Volt 500ns
Technical Specifications
Technology Standard
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 500 ns
Current - Reverse Leakage @ Vr 5 µA @ 1000 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C
Product Attributes
Packaging Ammo Pack
Standard Pack Qty3000
Alternate / Replacement Parts
Alternate Packaging RGP10ME-E3/54
Suggested Replacement
4,591
In Stock
Packaging: Ammo Pack
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategorySmall Signal Switching Diodes
RoHSRoHS Compliant By Exemption
Lifecycle
Reported Lead Time 0 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CNHTS 8541100000
CAHTS 8541100090
USHTS 8541100070
JPHTS 854110090
KRHTS 8541109000
TARIC 8541100000
MXHTS 8541100101
ECCN EAR99
Product Overview

RGP10ME-E3/73 by Vishay General Semiconductor is a small signal switching diodes designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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