*For representation only.
TRS40H120H,S1Q
Toshiba
Active
SiC Schottky Diodes SiC Schottky barrier diode;TO-247-2L; Vrrm=1200V; IF=40A; PD=454W
⚙
Technical Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 102A |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 40 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 230 µA @ 1.2 kV |
| Capacitance @ Vr, F | 4368pF @ 1V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247-2L |
| Operating Temperature - Junction | 175°C |
📦
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
13,260
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 46 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
ℹ
Product Overview
TRS40H120H,S1Q is a sic schottky diodes manufactured by Toshiba. This component is defined by a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified of 102A, a voltage, forward (vf) (max) @ if of 1.45 V @ 40 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 46 Days from factory. Simplytronix stocks TRS40H120H,S1Q for same-day shipping with genuine parts guaranteed.
