*For representation only.
RN1904FE,LF(CT
Toshiba
Active
Digital Transistors NPN x 2 BRT, Q1BSR=47kOhm, Q1BER=47kOhm, Q2BSR=47kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A
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Technical Specifications
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 250MHz |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 4000 |
984
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Digital Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8542399000 |
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
Toshiba's RN1904FE,LF(CT is a widely used transistors in electronic designs. This component is defined by a transistor type of 2 NPN - Pre-Biased (Dual), a current, collector (ic) of 100mA, a voltage, collector emitter breakdown of 50V, a resistor, base of 47kOhms, a resistor, emitter base of 47kOhms and a DC current gain (hfe) (min) @ ic, vce of 80 @ 10mA, 5V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order RN1904FE,LF(CT from Simplytronix for authenticated stock and same-day order processing.
