*For representation only.
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Technical Specifications
| Transistor Type | 2 NPN (Dual) |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Power - Max | 100mW |
| Frequency - Transition | 80MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 4000 |
7,336
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Toshiba, the HN1C01FE-Y,LF is classified as a bipolar transistors - bjt. Key specifications include a transistor type of 2 NPN (Dual), a current, collector (ic) of 150mA, a voltage, collector emitter breakdown of 50V, a vce saturation (max) @ ib, ic of 250mV @ 10mA, 100mA, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 120 @ 2mA, 6V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order HN1C01FE-Y,LF from Simplytronix for authenticated stock and same-day order processing.
