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2SK209-BL(TE85L,F)

Toshiba Active
JFETs N-Ch 10mA -50V FET 150 mW Audio LNA
Technical Specifications
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 50 V
Current - Drain (Idss) @ Vds (Vgs=0) 14 mA @ 10 V
Current Drain (Id) - Max 14 mA
Voltage - Cutoff (VGS off) @ Id 1.5 V @ 100 nA
Input Capacitance (Ciss) (Max) @ Vds 13pF @ 10V
Power - Max 150 mW
Operating Temperature 125°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59
Product Attributes
Packaging Reel
Standard Pack Qty3000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,316
In Stock
Packaging: Reel
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✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryJFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 54 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
KRHTS 8541299000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
Product Overview

2SK209-BL(TE85L,F) by Toshiba is a jfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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