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2SA2154CT-GR,L3F Toshiba
*For representation only.

2SA2154CT-GR,L3F

Toshiba Active
Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Technical Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 100 mW
Frequency - Transition 80MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Supplier Device Package CST3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 10000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
2,007
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Product Overview

2SA2154CT-GR,L3F is a transistors manufactured by Toshiba. It features a transistor type of PNP, a current, collector (ic) of 100 mA, a voltage, collector emitter breakdown of 50 V, a vce saturation (max) @ ib, ic of 300mV @ 10mA, 100mA, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 200 @ 2mA, 6V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. You can source 2SA2154CT-GR,L3F through Simplytronix, with fast shipping and verified authenticity.

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