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CSD19533KCS Texas Instruments
*For representation only.

CSD19533KCS

MOSFETs 100V 8.7mOhm N-CH Pw r MOSFET
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2670 pF @ 50 V
FET Feature -
Power Dissipation (Max) 188W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 50
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,930
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 84 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
TARIC 8542399000
MXHTS 8542399901
ECCN EAR99
Product Overview

The CSD19533KCS from Texas Instruments falls under the mosfets category. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 100A (Ta), a drive voltage of 6V, 10V and a rds on (max) @ id, vgs of 10.5mOhm @ 55A, 10V. This part has a typical lead time of 84 Days from factory. Simplytronix carries CSD19533KCS in stock, backed by a genuine parts guarantee and quick dispatch.

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