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TSM300NB06DCR RLG Taiwan Semiconductor
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TSM300NB06DCR RLG

MOSFETs 60V, 25A, Dual N-Channel Power MOSFET
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 6A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1079pF @ 30V
Power - Max 2W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-PDFN (5x6)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,608
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 168 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
Product Overview

Manufactured by Taiwan Semiconductor, the TSM300NB06DCR RLG is classified as a mosfets. This component is defined by a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 60V, a current, continuous drain (id) @ 25°C of 6A (Ta), 25A (Tc) and a rds on (max) @ id, vgs of 30mOhm @ 6A, 10V. This part has a typical lead time of 168 Days from factory. Order TSM300NB06DCR RLG from Simplytronix for authenticated stock and same-day order processing.

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