| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 220mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 220mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.91nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 30V |
| Power - Max | 240mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SOT-363 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Alternate Packaging | |
| Suggested Replacement | TQM2N7002KDCU6RF |
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | Restricted Availability |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
TSM2N7002AKDCU6 RFG is a mosfets manufactured by Taiwan Semiconductor. This component is defined by a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of Logic Level Gate, a drain to source voltage of 60V, a current, continuous drain (id) @ 25°C of 220mA (Ta) and a rds on (max) @ id, vgs of 2.5Ohm @ 220mA, 10V. This part has a typical lead time of 0 Days from factory. Order TSM2N7002AKDCU6 RFG from Simplytronix for authenticated stock and same-day order processing.