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TSCDH16065G1 Taiwan Semiconductor
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TSCDH16065G1

SiC Schottky Diodes 16A, 650V, SiC Schottky Diode
Technical Specifications
Diode Configuration 1 Pair Common Cathode
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) (per Diode) 16A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 8 A
Speed No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr 20 µA @ 650 V
Operating Temperature - Junction -55°C ~ 175°C
Grade -
Qualification -
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
📦 Product Attributes
Packaging Tube
Standard Pack Qty 600
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,732
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle
Lead Time 84 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541100090
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

Taiwan Semiconductor's TSCDH16065G1 is a widely used sic schottky diodes in electronic designs. It features a diode configuration of 1 Pair Common Cathode, a technology of Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified (io) of 16A, a voltage, forward (vf) (max) @ if of 1.45 V @ 8 A and a speed of No Recovery Time > 500mA (Io). This part has a typical lead time of 84 Days from factory. Order TSCDH16065G1 from Simplytronix for authenticated stock and same-day order processing.

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