*For representation only.
BC807-25W RFG
Taiwan Semiconductor
Active
Bipolar Transistors - BJT -50V, -0.5A, PNP Bipolar Transistor
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Technical Specifications
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Power - Max | 200 mW |
| Frequency - Transition | 80MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | SOT-323 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
10,285
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 161 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Taiwan Semiconductor, the BC807-25W RFG is classified as a bipolar transistors - bjt. Notable characteristics of this part include a transistor type of PNP, a current, collector (ic) of 500 mA, a voltage, collector emitter breakdown of 45 V, a vce saturation (max) @ ib, ic of 700mV @ 50mA, 500mA, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 160 @ 100mA, 1V. This part has a typical lead time of 161 Days from factory. You can source BC807-25W RFG through Simplytronix, with fast shipping and verified authenticity.
