*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 4 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 6A, 10V, 6mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V, 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1750pF @ 25V, 2600pF @ 25V |
| Power - Max | - |
| Operating Temperature | 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q100 |
| Mounting Type | Surface Mount |
| Package / Case | 36-PowerBFSOP (0.295", 7.50mm Width) |
| Supplier Device Package | PowerSSO-36 TP |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
13,716
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Gate Drivers |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 182 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8542399000 |
| CAHTS | 8542390000 |
| USHTS | 8542390090 |
| MXHTS | 8542399999 |
| ECCN | EAR99 |
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Product Overview
The VNH9013YTR from STMicroelectronics falls under the gate drivers category. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of 4 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 80V, a current, continuous drain (id) @ 25°C of 40A (Tc) and a rds on (max) @ id, vgs of 7.8mOhm @ 6A, 10V, 6mOhm @ 6A, 10V. This part has a typical lead time of 182 Days from factory. You can source VNH9013YTR through Simplytronix, with fast shipping and verified authenticity.
