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STU7NM60N STMicroelectronics
*For representation only.

STU7NM60N

MOSFETs N-Ch 600V 0.84 Ohm 5A 2nd Gen MDmesh
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 363 pF @ 50 V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-251 (IPAK)
Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
📦 Product Attributes
Packaging Tube
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,543
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 112 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541100000
MXHTS 85412999
ECCN EAR99
Product Overview

The STU7NM60N from STMicroelectronics falls under the mosfets category. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 600 V, a current, continuous drain (id) @ 25°C of 5A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 900mOhm @ 2.5A, 10V. This part has a typical lead time of 112 Days from factory. Simplytronix carries STU7NM60N in stock, backed by a genuine parts guarantee and quick dispatch.

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