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STPSC8H065G2Y-TR STMicroelectronics
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STPSC8H065G2Y-TR

SiC Schottky Diodes Automotive 650 V, 8 A Silicon Carbide Diode
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 1.65 V @ 8 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 80 µA @ 650 V
Capacitance @ Vr, F 414pF @ 0V, 1MHz
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK HV
Operating Temperature - Junction -40°C ~ 175°C
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,869
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
USHTS 8541100080
ECCN EAR99
Product Overview

Manufactured by STMicroelectronics, the STPSC8H065G2Y-TR is classified as a sic schottky diodes. It features a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 8A, a voltage, forward (vf) (max) @ if of 1.65 V @ 8 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 0 Days from factory. You can source STPSC8H065G2Y-TR through Simplytronix, with fast shipping and verified authenticity.

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