*For representation only.
STPSC20H12G-TR
SiC Schottky Diodes 1200 V, 20 A High surge Silicon Carbide Power Schottky Diode
⚙
Technical Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 20A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 20 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 120 µA @ 1200 V |
| Capacitance @ Vr, F | 1650pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | -40°C ~ 175°C |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
7,738
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| JPHTS | 854110090 |
| KRHTS | 8541109000 |
| MXHTS | 8541100101 |
| ECCN | EAR99 |
ℹ
Product Overview
The STPSC20H12G-TR from STMicroelectronics falls under the sic schottky diodes category. Key specifications include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified of 20A, a voltage, forward (vf) (max) @ if of 1.5 V @ 20 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 0 Days from factory. Simplytronix carries STPSC20H12G-TR in stock, backed by a genuine parts guarantee and quick dispatch.
