*For representation only.
STGYA120M65DF2
STMicroelectronics
Active
IGBTs Trench gate field-stop IGBT, M series 650 V, 120 A low loss
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Technical Specifications
| IGBT Type | NPT, Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 160 A |
| Current - Collector Pulsed (Icm) | 360 A |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 120A |
| Power - Max | 625 W |
| Switching Energy | 1.8mJ (on), 4.41mJ (off) |
| Input Type | Standard |
| Gate Charge | 420 nC |
| Td (on/off) @ 25°C | 66ns/185ns |
| Test Condition | 400V, 120A, 4.7Ohm, 15V |
| Reverse Recovery Time (trr) | 202 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Exposed Pad |
| Supplier Device Package | MAX247™ |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 600 |
13,923
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | IGBTs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 98 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
Manufactured by STMicroelectronics, the STGYA120M65DF2 is classified as an igbts. This component is defined by a IGBT type of NPT, Trench Field Stop, a voltage, collector emitter breakdown of 650 V, a current, collector (ic) of 160 A, a current, collector pulsed of 360 A, a vce(on) (max) @ vge, ic of 1.95V @ 15V, 120A and a power, max of 625 W. This part has a typical lead time of 98 Days from factory. Order STGYA120M65DF2 from Simplytronix for authenticated stock and same-day order processing.
