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STGSH80HB65DAG STMicroelectronics
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STGSH80HB65DAG

IGBTs Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode
Technical Specifications
IGBT Type -
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 83 A
Power - Max 250 W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 80A
Input Capacitance (Cies) @ Vce 10450 pF @ 25 V
Input Standard
NTC Thermistor No
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 9-PowerSMD
Supplier Device Package 9-ACEPACK SMIT
📦 Product Attributes
Packaging Reel
Standard Pack Qty 200
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,011
Units In Stock
📦 Reel
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🔑 Key Specifications
Category IGBTs
RoHS RoHS Compliant
Lifecycle
Lead Time 154 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

STGSH80HB65DAG is an igbts manufactured by STMicroelectronics. This component is defined by a IGBT type of -, a configuration of Half Bridge, a voltage, collector emitter breakdown of 650 V, a current, collector (ic) of 83 A, a power, max of 250 W and a vce(on) (max) @ vge, ic of 2.1V @ 15V, 80A. This part has a typical lead time of 154 Days from factory and ships with a full manufacturer datasheet available for download. You can source STGSH80HB65DAG through Simplytronix, with fast shipping and verified authenticity.

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