*For representation only.
STGD4M65DF2
STMicroelectronics
Active
IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss
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Technical Specifications
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 8 A |
| Current - Collector Pulsed (Icm) | 16 A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 4A |
| Power - Max | 68 W |
| Switching Energy | 40µJ (on), 136µJ (off) |
| Input Type | Standard |
| Gate Charge | 15.2 nC |
| Td (on/off) @ 25°C | 12ns/86ns |
| Test Condition | 400V, 4A, 47Ohm, 15V |
| Reverse Recovery Time (trr) | 133 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
4,451
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | IGBTs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 98 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
STMicroelectronics's STGD4M65DF2 is a widely used igbts in electronic designs. This component is defined by a IGBT type of Trench Field Stop, a voltage, collector emitter breakdown of 650 V, a current, collector (ic) of 8 A, a current, collector pulsed of 16 A, a vce(on) (max) @ vge, ic of 2.1V @ 15V, 4A and a power, max of 68 W. This part has a typical lead time of 98 Days from factory. You can source STGD4M65DF2 through Simplytronix, with fast shipping and verified authenticity.
