*For representation only.
STGB30H65DFB2
IGBTs Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package
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Technical Specifications
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
| Power - Max | 167 W |
| Switching Energy | 270µJ (on), 310µJ (off) |
| Input Type | Standard |
| Gate Charge | 90 nC |
| Td (on/off) @ 25°C | 18.4ns/71ns |
| Test Condition | 400V, 30A, 6.8Ohm, 15V |
| Reverse Recovery Time (trr) | 115 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-4, D2PAK (3 Leads + Tab), TO-263AA |
| Supplier Device Package | D2PAK-3 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
5,957
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | IGBTs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 105 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
The STGB30H65DFB2 from STMicroelectronics falls under the igbts category. Notable characteristics of this part include a IGBT type of Trench Field Stop, a voltage, collector emitter breakdown of 650 V, a current, collector (ic) of 50 A, a current, collector pulsed of 90 A, a vce(on) (max) @ vge, ic of 2.1V @ 15V, 30A and a power, max of 167 W. This part has a typical lead time of 105 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries STGB30H65DFB2 in stock, backed by a genuine parts guarantee and quick dispatch.
