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SGT240R70ILB STMicroelectronics
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SGT240R70ILB

GaN FETs 700 V, 165 mOhm typ., 10 A, e-mode PowerGaN transistor
Technical Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V
Rds On (Max) @ Id, Vgs 240mOhm @ 3A, 6V
Vgs(th) (Max) @ Id 2.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs 2 nC @ 6 V
Vgs (Max) +7V, -6V
Input Capacitance (Ciss) (Max) @ Vds 79 pF @ 400 V
FET Feature -
Power Dissipation (Max) 76W (Tc)
Operating Temperature -55°C ~ 150°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerFlat™ (8x8) HV
Package / Case 8-VDFN Exposed Pad
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,066
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 126 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Manufactured by STMicroelectronics, the SGT240R70ILB is classified as a gan fets. This component is defined by a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 700 V, a current, continuous drain (id) @ 25°C of 10A (Tc), a drive voltage of 6V and a rds on (max) @ id, vgs of 240mOhm @ 3A, 6V. This part has a typical lead time of 126 Days from factory. You can source SGT240R70ILB through Simplytronix, with fast shipping and verified authenticity.

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