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A1P50S65M2-F STMicroelectronics
*For representation only.

A1P50S65M2-F

IGBT Modules ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, so
Technical Specifications
IGBT Type Trench Field Stop
Configuration Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 50 A
Power - Max 208 W
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 50A
Current - Collector Cutoff (Max) 100 µA
Input Capacitance (Cies) @ Vce 4.15 nF @ 25 V
Input Standard
NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package ACEPACK™ 1
📦 Product Attributes
Packaging Tray
Standard Pack Qty 18
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,594
Units In Stock
📦 Tray
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🔑 Key Specifications
Category IGBT Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 364 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
Product Overview

A1P50S65M2-F is an igbt modules manufactured by STMicroelectronics. This component is defined by a IGBT type of Trench Field Stop, a configuration of Three Phase Inverter, a voltage, collector emitter breakdown of 650 V, a current, collector (ic) of 50 A, a power, max of 208 W and a vce(on) (max) @ vge, ic of 2.3V @ 15V, 50A. This part has a typical lead time of 364 Days from factory. Simplytronix carries A1P50S65M2-F in stock, backed by a genuine parts guarantee and quick dispatch.

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