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GP3D050B170B SemiQ
*For representation only.

GP3D050B170B

SemiQ Active
SiC Schottky Diodes SiC Schottky Diode 50A 1700V TO-247-2
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1700 V
Current - Average Rectified (Io) 151A
Voltage - Forward (Vf) (Max) @ If 1.65 V @ 50 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 1.7 kV
Capacitance @ Vr, F 3511pF @ 1V, 1MHz
Grade -
Qualification -
Mounting Type Through Hole
Package / Case TO-247-2
Supplier Device Package TO-247-2
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,566
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle New at Mouser
Lead Time 18 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
CAHTS 8541100090
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

The GP3D050B170B from SemiQ falls under the sic schottky diodes category. Notable characteristics of this part include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1700 V, a current, average rectified of 151A, a voltage, forward (vf) (max) @ if of 1.65 V @ 50 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 18 Days from factory. Simplytronix carries GP3D050B170B in stock, backed by a genuine parts guarantee and quick dispatch.

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