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GP3D020A170B SemiQ
*For representation only.

GP3D020A170B

SemiQ Active
SiC Schottky Diodes SiC Schottky 1700V 203nC 20A
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1700 V
Current - Average Rectified (Io) 67A
Voltage - Forward (Vf) (Max) @ If 1.65 V @ 20 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 80 µA @ 1700 V
Capacitance @ Vr, F 1403pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-247-2
Supplier Device Package TO-247-2
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,458
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle
Lead Time 48 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
USHTS 8541100080
ECCN EAR99
Product Overview

GP3D020A170B is a sic schottky diodes manufactured by SemiQ. Key specifications include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1700 V, a current, average rectified of 67A, a voltage, forward (vf) (max) @ if of 1.65 V @ 20 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 48 Days from factory and ships with a full manufacturer datasheet available for download. Order GP3D020A170B from Simplytronix for authenticated stock and same-day order processing.

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