*For representation only.
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Technical Specifications
| Diode Configuration | 2 Independent |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 101A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 50 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 10 |
5,130
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Diode Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| JPHTS | 854110090 |
| KRHTS | 8541109000 |
| TARIC | 8541100000 |
| MXHTS | 8541100199 |
| BRHTS | 85411099 |
| ECCN | EAR99 |
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Product Overview
SemiQ's GHXS050B120S-D3 is a widely used diode modules in electronic designs. Key specifications include a diode configuration of 2 Independent, a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified (io) of 101A (DC), a voltage, forward (vf) (max) @ if of 1.7 V @ 50 A and a speed of No Recovery Time > 500mA (Io). This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries GHXS050B120S-D3 in stock, backed by a genuine parts guarantee and quick dispatch.
