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GHXS030A120S-D1E SemiQ
*For representation only.

GHXS030A120S-D1E

SemiQ Active
Diode Modules SiC SBD Rectifier Bridge Power Module 1200V 30A
Technical Specifications
Diode Type Single Phase
Technology Silicon Carbide Schottky
Voltage - Peak Reverse (Max) 1.2 kV
Current - Average Rectified (Io) 30 A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 30 A
Current - Reverse Leakage @ Vr 200 µA @ 1200 V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Supplier Device Package SOT-227
📦 Product Attributes
Packaging Tube
Standard Pack Qty 10
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,799
Units In Stock
📦 Tube
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🔑 Key Specifications
Category Diode Modules
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541590000
CAHTS 8541100090
USHTS 8541100080
JPHTS 854110090
KRHTS 8541109000
TARIC 8541100000
MXHTS 8541100199
BRHTS 85411099
ECCN EAR99
Product Overview

Manufactured by SemiQ, the GHXS030A120S-D1E is classified as a diode modules. Key specifications include a diode type of Single Phase, a technology of Silicon Carbide Schottky, a voltage, peak reverse of 1.2 kV, a current, average rectified of 30 A, a voltage, forward (vf) (max) @ if of 1.7 V @ 30 A and a current, reverse leakage @ vr of 200 µA @ 1200 V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks GHXS030A120S-D1E for same-day shipping with genuine parts guaranteed.

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