*For representation only.
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 1.01kA (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 500A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 200mA |
| Gate Charge (Qg) (Max) @ Vgs | 2608nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 82200pF @ 800V |
| Power - Max | 2618W (Tc) |
| Operating Temperature | -40°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
📦
Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 2 |
8,321
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | New Product |
| Lead Time | 140 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290055 |
| ECCN | EAR99 |
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Product Overview
GCMX1P4B120S4B1-N is a mosfet modules manufactured by SemiQ. It features a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 1.01kA (Tc) and a rds on (max) @ id, vgs of 2.3mOhm @ 500A, 18V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Order GCMX1P4B120S4B1-N from Simplytronix for authenticated stock and same-day order processing.
