*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 18 V |
| Vgs (Max) | +22V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1328 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 118W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227 |
| Package / Case | SOT-227-4, miniBLOC |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
5,851
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Product Overview
GCMX080C120S1-E1 is a mosfet modules manufactured by SemiQ. Key specifications include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 28A (Tc), a drive voltage of 18V and a rds on (max) @ id, vgs of 100mOhm @ 10A, 18V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order GCMX080C120S1-E1 from Simplytronix for authenticated stock and same-day order processing.
