*For representation only.
⚙
Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 102A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 50A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 241nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500pF @ 800V |
| Power - Max | 385W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 40 |
12,028
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 15 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
SemiQ's GCMX020A120B2B1P is a widely used mosfet modules in electronic designs. Notable characteristics of this part include a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 102A (Tc) and a rds on (max) @ id, vgs of 28mOhm @ 50A, 20V. This part has a typical lead time of 15 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks GCMX020A120B2B1P for same-day shipping with genuine parts guaranteed.
