*For representation only.
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 173A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 100A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 40mA |
| Gate Charge (Qg) (Max) @ Vgs | 483nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13800pF @ 800V |
| Power - Max | 577W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 40 |
8,499
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
SemiQ's GCMX010A120B3B1P is a widely used mosfet modules in electronic designs. Notable characteristics of this part include a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 173A (Tc) and a rds on (max) @ id, vgs of 14mOhm @ 100A, 20V. This part has a typical lead time of 0 Days from factory. You can source GCMX010A120B3B1P through Simplytronix, with fast shipping and verified authenticity.
