*For representation only.
⚙
Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 625A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 300A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 120mA |
| Gate Charge (Qg) (Max) @ Vgs | 1408nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 41400pF @ 800V |
| Power - Max | 2113W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
📦
Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 15 |
7,327
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | New Product |
| Lead Time | 123 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
Manufactured by SemiQ, the GCMX003A120S3B1-N is classified as a mosfet modules. This component is defined by a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 625A (Tc) and a rds on (max) @ id, vgs of 5.5mOhm @ 300A, 20V. This part has a typical lead time of 123 Days from factory and ships with a full manufacturer datasheet available for download. Order GCMX003A120S3B1-N from Simplytronix for authenticated stock and same-day order processing.
