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SLS120J100A-ISBTH Sanan Semiconductor
*For representation only.

SLS120J100A-ISBTH

Diode Modules 1200V 100A, SOT-227, Industrial Grade
Technical Specifications
Diode Configuration 2 Independent
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) (per Diode) 100A
Voltage - Forward (Vf) (Max) @ If 1.4 V @ 100 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 300 µA @ 1.2 kV
Operating Temperature - Junction -55°C ~ 175°C
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Supplier Device Package SOT-227
📦 Product Attributes
Packaging Tube
Standard Pack Qty 10
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,960
Units In Stock
📦 Tube
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🔑 Key Specifications
Category Diode Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541100090
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

SLS120J100A-ISBTH is a diode modules manufactured by Sanan Semiconductor. It features a diode configuration of 2 Independent, a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified (io) of 100A, a voltage, forward (vf) (max) @ if of 1.4 V @ 100 A and a speed of No Recovery Time > 500mA (Io). This part has a typical lead time of 0 Days from factory. Simplytronix carries SLS120J100A-ISBTH in stock, backed by a genuine parts guarantee and quick dispatch.

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