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SLS065J100A-ISATH

SiC Schottky Diodes 650V 100A, SOT-227, Industrial Grade
Technical Specifications
Diode Configuration 2 Independent
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) (per Diode) 164A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 100 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V
Operating Temperature - Junction -40°C ~ 175°C
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Supplier Device Package SOT-227
📦 Product Attributes
Packaging Tube
Standard Pack Qty 10
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,307
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541100000
ECCN EAR99
Product Overview

Manufactured by Sanan Semiconductor, the SLS065J100A-ISATH is classified as a sic schottky diodes. Key specifications include a diode configuration of 2 Independent, a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified (io) of 164A, a voltage, forward (vf) (max) @ if of 1.7 V @ 100 A and a speed of No Recovery Time > 500mA (Io). This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SLS065J100A-ISATH for same-day shipping with genuine parts guaranteed.

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