*For representation only.
SDS120J060G3-ISATH
Sanan Semiconductor
Active
SiC Schottky Diodes 1200V 60A, TO247-3L, Industrial Grade
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Technical Specifications
| Diode Configuration | 1 Pair Common Cathode |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 95A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 30 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 72 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3L |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
13,535
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
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Product Overview
Sanan Semiconductor's SDS120J060G3-ISATH is a widely used sic schottky diodes in electronic designs. Notable characteristics of this part include a diode configuration of 1 Pair Common Cathode, a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified (io) of 95A, a voltage, forward (vf) (max) @ if of 1.5 V @ 30 A and a speed of No Recovery Time > 500mA (Io). This part has a typical lead time of 0 Days from factory. You can source SDS120J060G3-ISATH through Simplytronix, with fast shipping and verified authenticity.
