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SDS120J002D3-ISARH Sanan Semiconductor
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SDS120J002D3-ISARH

SiC Schottky Diodes 1200V 2A, TO252-2L, Industrial Grade
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 11A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 2 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 8 µA @ 1200 V
Capacitance @ Vr, F 165pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package TO-252-2L
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,964
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541100090
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

Sanan Semiconductor's SDS120J002D3-ISARH is a widely used sic schottky diodes in electronic designs. Notable characteristics of this part include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified of 11A, a voltage, forward (vf) (max) @ if of 1.5 V @ 2 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 0 Days from factory. Order SDS120J002D3-ISARH from Simplytronix for authenticated stock and same-day order processing.

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