*For representation only.
SDS065J012S3-ISARH
Sanan Semiconductor
Active
SiC Schottky Diodes 650V 12A, DFN8*8-4L, Industrial Grade
⚙
Technical Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 44A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 12 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 36 µA @ 650 V |
| Capacitance @ Vr, F | 651pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | 4-PowerVSFN |
| Supplier Device Package | 4-DFN (8x8) |
| Operating Temperature - Junction | -55°C ~ 175°C |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
3,912
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
ℹ
Product Overview
Sanan Semiconductor's SDS065J012S3-ISARH is a widely used sic schottky diodes in electronic designs. This component is defined by a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 44A, a voltage, forward (vf) (max) @ if of 1.5 V @ 12 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SDS065J012S3-ISARH for same-day shipping with genuine parts guaranteed.
