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ADS065J020C3-ASATH Sanan Semiconductor
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ADS065J020C3-ASATH

SiC Schottky Diodes 650V 20A, TO220-2L, Auto Grade
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 51A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 20 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V
Capacitance @ Vr, F 1018pF @ 0V, 1MHz
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220-2L
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Tube
Standard Pack Qty 50
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,885
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541100090
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

Manufactured by Sanan Semiconductor, the ADS065J020C3-ASATH is classified as a sic schottky diodes. Key specifications include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 51A, a voltage, forward (vf) (max) @ if of 1.5 V @ 20 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 0 Days from factory. You can source ADS065J020C3-ASATH through Simplytronix, with fast shipping and verified authenticity.

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