| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
60 V |
| Current - Continuous Drain (Id) @ 25°C |
650mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 10V |
| Rds On (Max) @ Id, Vgs |
680mOhm @ 650mA, 10V |
| Vgs(th) (Max) @ Id |
2V @ 10µA |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
47 pF @ 30 V |
| Power Dissipation (Max) |
200mW (Ta) |
| Operating Temperature |
150°C (TJ) |
| Grade |
Automotive |
| Qualification |
AEC-Q101 |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
SST3 |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |