*For representation only.
SCT4065DTWHRTCR
SiC MOSFETs 750V, 24A, 9-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 750 V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 12A, 18V |
| Vgs(th) (Max) @ Id | 4.8V @ 6.15mA |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 18 V |
| Vgs (Max) | +21V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 1066 pF @ 500 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | 3-USON (1.1x1) |
| Package / Case | 3-PowerUDFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 600 |
13,965
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
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Test report available upon request —
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 189 Days (from factory) |
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Documentation
Datasheet not available
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Product Overview
ROHM Semiconductor's SCT4065DTWHRTCR is a widely used sic mosfets in electronic designs. Key specifications include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 750 V, a current, continuous drain (id) @ 25°C of 24A (Tc), a drive voltage of 18V and a rds on (max) @ id, vgs of 85mOhm @ 12A, 18V. This part has a typical lead time of 189 Days from factory. Order SCT4065DTWHRTCR from Simplytronix for authenticated stock and same-day order processing.
